symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 100v 35a 21 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed c a www.samhop.com.tw apr,30,2014 1 details are subject to change without notice. t c =25 c g s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a t c =70 c w 35 102 42 28 27 s mhop microelectronics c orp. a ver 1.0 STU35N10 std35n10 green product a c s t d s e ri e s to - 2 5 1 ( i - p a k ) g s d 30 @ vgs=4.5v e as mj single pulse avalanche energy d 196 a a a
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 21 g fs s c iss 2490 pf c oss 231 pf c rss 128 pf q g 50 nc 43 75 54 t d(on) 33 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =17.5a v ds =10v , i d =17.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 26 b f=1.0mhz b www.samhop.com.tw apr,30,2014 2 v sd nc q gs nc q gd 3.6 12 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =17.5a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =8a 0.78 1.3 v notes v ds =50v,i d =17.5a,v gs =10v a.surface mounted on fr4 board of 1 inch 2 , 1oz. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) 1 1.6 3 29 STU35N10 std35n10 ver 1.0 v gs =4.5v , i d =15a 30 41 m ohm
www.samhop.com.tw apr,30,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 40 32 24 16 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 30 24 18 12 6 0 0 1 6 5 4 3 2 tj=125 c -55 c 25 c 60 50 40 30 20 10 1 2.5 2.2 1.9 1.6 1.3 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =17.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 8 v gs =3v v gs =3.5v v gs =4v 40 32 24 16 8 1 STU35N10 std35n10 ver 1.0 v gs =4.5v v gs =4.5v i d =15a v gs =4.5v v gs =5v v gs =10v
www.samhop.com.tw apr,30,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 110 100 10 100 1000 90 75 60 45 30 15 0 10 0 125 c 75 c 25 c i d =17.5a 10 1 20 ciss coss crss 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 0 5 0.1 1 10 100 100 10 1 0.3 r ds (on) li m i t v gs =10v single pulse t a =25 c dc 1 0 m s 1 ms 100us 10us 10 8 6 4 2 0 v ds =50v i d =17.5a 8 6 4 2 0 1.0 0.8 0.6 0.4 0.2 25 c 75 c 125 c STU35N10 std35n10 ver 1.0 0 5101520 25 30 35 40 vds=50v,id=1a vgs=10v td(on) tr td(off ) tf
www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. 2. 3. 4. single pulse 1 r ja r ja(t)=r(t)* r ja=see datasheet t jm -t a =p dm * r ja(t) duty cycle,d= t 1 / t 2 apr,30,2014 ver 1.0 STU35N10 std35n10
ver 1.0 www.samhop.com.tw apr,30,2014 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380 STU35N10 std35n10
www.samhop.com.tw 7 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.0 apr,30,2014 STU35N10 std35n10
ver 1.0 www.samhop.com.tw apr,30,2014 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h STU35N10 std35n10
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STU35N10 smc internal code no. (a,b,c...z) ver 1.0 STU35N10 std35n10 apr,30,2014
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) std35n10 smc internal code no. (a,b,c...z) ver 1.0 apr,30,2014 STU35N10 std35n10
|
